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Abstract Electrostrictors, materials developing mechanical strain proportional to the square of the applied electric field, present many advantages for mechanical actuation as they convert electrical energy into mechanical, but not vice versa. Both high relative permittivity and reliance on Pb as the key component in commercial electrostrictors pose serious practical and health problems. Here we describe a low relative permittivity (<250) ceramic, Zr_xCe_1-xO₂(x < 0.2), that displays electromechanical properties rivaling those of the best performing electrostrictors: longitudinal electrostriction strain coefficient ~10⁻¹⁶m²/V²; relaxation frequency ≈ a few kHz; and strain ≥0.02%. Combining X-ray absorption spectroscopy, atomic-level modeling and electromechanical measurements, here we show that electrostriction in Zr_xCe_1-xO₂is enabled by elastic dipoles produced by anharmonic motion of the smaller isovalent dopant (Zr). Unlike the elastic dipoles in aliovalent doped ceria, which are present even in the absence of an applied elastic or electric field, the elastic dipoles in Zr_xCe_1-xO₂are formed only under applied anisotropic field. The local descriptors of electrostrictive strain, namely, the cation size mismatch and dynamic anharmonicity, are sufficiently versatile to guide future searches in other polycrystalline solids. 

A protocol for successfully depositing [001] textured, 2–3 µm thick films of Al0.75Sc0.25N, is proposed. The procedure relies on the fact that sputtered Ti is [001]-textured α-phase (hcp). Diffusion of nitrogen ions into the α-Ti film during reactive sputtering of Al0.75,Sc0.25N likely forms a [111]-oriented TiN intermediate layer. The lattice mismatch of this very thin film with Al0.75Sc0.25N is ~3.7%, providing excellent conditions for epitaxial growth. In contrast to earlier reports, the Al0.75Sc0.25N films prepared in the current study are Al-terminated. Low growth stress (<100 MPa) allows films up to 3 µm thick to be deposited without loss of orientation or decrease in piezoelectric coefficient. An advantage of the proposed technique is that it is compatible with a variety of substrates commonly used for actuators or MEMS, as demonstrated here for both Si wafers and D263 borosilicate glass. Additionally, thicker films can potentially lead to increased piezoelectric stress/strain by supporting application of higher voltage, but without increase in the magnitude of the electric field. 

We report the effect of extended duration electron beam exposure on the minority carrier transport properties of 10 MeV proton irradiated (fluence ∼10¹⁴cm⁻²) Si-dopedβ-Ga₂O₃Schottky rectifiers. The diffusion length (L) of minority carriers is found to decrease with temperature from 330 nm at 21 °C to 289 nm at 120 °C, with an activation energy of ∼26 meV. This energy corresponds to the presence of shallow Si trap-levels. Extended duration electron beam exposure enhancesLfrom 330 nm to 726 nm at room temperature. The rate of increase forLis lower with increased temperature, with an activation energy of 43 meV. Finally, a brief comparison of the effect of electron injection on proton irradiated, alpha-particle irradiated and a reference Si-dopedβ-Ga₂O₃Schottky rectifiers is presented. 

The impact of electron injection, using 10 keV beam of a Scanning Electron Microscope, on minority carrier transport in Si-doped β-Ga2O3 was studied for temperatures ranging from room to 120°C. In-situ Electron Beam-Induced Current technique was employed to determine the diffusion length of minority holes as a function of temperature and duration of electron injection. The experiments revealed a pronounced elongation of hole diffusion length with increasing duration of injection. The activation energy, associated with the electron injection-induced elongation of the diffusion length, was determined at ∼ 74 meV and matches the previous independent studies. It was additionally discovered that an increase of the diffusion length in the regions affected by electron injection is accompanied by a simultaneous decrease of cathodoluminescence intensity. Both effects were attributed to increasing non-equilibrium hole lifetime in the valence band of β-Ga2O3 semiconductor.